Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode
Identifieur interne : 004315 ( Main/Repository ); précédent : 004314; suivant : 004316Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode
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Abstract
This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT: PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode</title><author><name sortKey="Shah, Mutabar" uniqKey="Shah M">Mutabar Shah</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi</s1><s2>Khyber Pakhtunkhwa 23640</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Khyber Pakhtunkhwa 23640</wicri:noRegion></affiliation></author><author><name sortKey="Sayyad, M H" uniqKey="Sayyad M">M. H. Sayyad</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi</s1><s2>Khyber Pakhtunkhwa 23640</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Khyber Pakhtunkhwa 23640</wicri:noRegion></affiliation></author><author><name sortKey="Karimov, Kh S" uniqKey="Karimov K">Kh S. Karimov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi</s1><s2>Khyber Pakhtunkhwa 23640</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Khyber Pakhtunkhwa 23640</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33</s1><s2>Dushanbe 734025</s2><s3>TJK</s3><sZ>3 aut.</sZ></inist:fA14><country>Tadjikistan</country><wicri:noRegion>Dushanbe 734025</wicri:noRegion></affiliation></author><author><name sortKey="Wahab, Fazal" uniqKey="Wahab F">Fazal Wahab</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi</s1><s2>Khyber Pakhtunkhwa 23640</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Khyber Pakhtunkhwa 23640</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0519283</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0519283 INIST</idno><idno type="RBID">Pascal:10-0519283</idno><idno type="wicri:Area/Main/Corpus">003979</idno><idno type="wicri:Area/Main/Repository">004315</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>Electrical conductivity</term><term>IV characteristic</term><term>Junction diodes</term><term>Metallophthalocyanine</term><term>Organic conductors</term><term>Rectification</term><term>Series resistance</term><term>Thin films</term><term>Tin Indium Oxides Mixed</term><term>Vacuum deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet redresseur</term><term>Dépôt sous vide</term><term>Caractéristique courant tension</term><term>Hauteur barrière</term><term>Résistance série</term><term>Conductivité électrique</term><term>Phtalocyanine métallique</term><term>Etain Indium Oxyde Mixte</term><term>Diode jonction</term><term>Conducteur organique</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT: PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>43</s2></fA05><fA06><s2>40</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode</s1></fA08><fA11 i1="01" i2="1"><s1>SHAH (Mutabar)</s1></fA11><fA11 i1="02" i2="1"><s1>SAYYAD (M. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>KARIMOV (Kh S.)</s1></fA11><fA11 i1="04" i2="1"><s1>WAHAB (Fazal)</s1></fA11><fA14 i1="01"><s1>Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi</s1><s2>Khyber Pakhtunkhwa 23640</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33</s1><s2>Dushanbe 734025</s2><s3>TJK</s3><sZ>3 aut.</sZ></fA14><fA20><s2>405104.1-405104.5</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000192446570080</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0519283</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT: PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet redresseur</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Rectification</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépôt sous vide</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Vacuum deposition</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>IV characteristic</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Hauteur barrière</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Barrier height</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Résistance série</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Series resistance</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Resistencia en serie</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Phtalocyanine métallique</s0><s5>11</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Metallophthalocyanine</s0><s5>11</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Ftalocianina metálica</s0><s5>11</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Etain Indium Oxyde Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Tin Indium Oxides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diode jonction</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Junction diodes</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Conducteur organique</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Organic conductors</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche mince</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Thin films</s0><s5>17</s5></fC03><fN21><s1>347</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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